strong ir fet? IRFH7085pbf 1 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 hexfet ? power mosfet application ? ? half-bridge and full-bridge topologies ? ? synchronous rectifier applications ? ? resonant mode power supplies ? ? dc/dc converters ? ? dc/ac inverters benefits ? ? improved gate, avalanche and dynamic dv/dt ruggedness ? ? fully characterized capacitance and avalanche soa ? ? enhanced body diode dv/dt and di/dt capability ? ? lead-free, rohs compliant ? v dss 60v r ds(on) typ. 2.6m ? ? max 3.2m ? ? i d (silicon limited) 147a ? i d (package limited) 100a ? fig 1. typical on-resistance vs. gate voltage fig 2. maximum drain current vs. case temperature ? pqfn 5x6 mm ? ? base part number package type standard pack orderable part number ? ? form quantity IRFH7085pbf pqfn 5mm x 6mm tape and reel 4000 IRFH7085trpbf 25 50 75 100 125 150 t c , case temperature (c) 0 25 50 75 100 125 150 i d , d r a i n c u r r e n t ( a ) limited by package 4 6 8 10 12 14 16 18 20 v gs, gate -to -source voltage (v) 2.0 3.0 4.0 5.0 6.0 7.0 8.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) i d = 75a t j = 25c t j = 125c downloaded from: http:///
? IRFH7085pbf 2 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 absolute maximum rating symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v 23 a ? i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (silicon limited) 147 ? i d @ t c(bottom) = 100c continuous drain current, v gs @ 10v 93 i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) 100 ? i dm pulsed drain current ? 590 a ? p d @ t c = 25c maximum power dissipation 156 w linear derating factor 1.25 w/c v gs gate-to-source voltage 20 v t j t stg operating junction and storage temperature range -55 to + 150 ? c ? avalanche characteristics ? symbol parameter max. units e as (thermally limited) single pulse avalanche energy ?? 319 e as (thermally limited) single pulse avalanche energy ?? 554 i ar avalanche current ? see fig 15, 16, 23a, 23b ? a e ar repetitive avalanche energy ? mj thermal resistance parameter typ. max. units r ? jc (bottom) junction-to-case ? 0.5 0.8 c/w r ? jc (top) junction-to-case ? CCC 20 r ? ja junction-to-ambient ? CCC 34 r ? ja (<10s) junction-to-ambient CCC 22 mj static @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 60 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 43 CCC mv/c reference to 25c, i d = 1.0ma r ds(on) CCC 2.6 3.2 m ?? v gs = 10v, i d = 75a ? CCC 3.6 CCC ? v gs = 6.0v, i d = 38a ? v gs(th) gate threshold voltage 2.1 CCC 3.7 v v ds = v gs , i d = 150a i dss drain-to-source leakage current CCC CCC 1.0 a v ds = 60v, v gs = 0v CCC CCC 150 v ds = 60v,v gs = 0v,t j = 125c i gss gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v r g gate resistance CCC 1.4 CCC ?? static drain-to-source on-resistance notes: ?? calculated continuous current based on maximum allowable junction temperature. package is limited to 100a by production test capability. ?? repetitive rating; pulse width limited by max. junction temperature. ? limited by t jmax , starting t j = 25c, l = 113h, r g = 50 ? , i as = 75a, v gs = 10v. ?? i sd ? 75a, di/dt ? 1280a/s, v dd ? v (br)dss , t j ?? 150c. ?? pulse width ? 400s; duty cycle ? 2%. ? c oss eff. (tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . ? c oss eff. (er) is a fixed capacitance that gives the same energy as c oss while v ds is rising from 0 to 80% v dss . ? r ? is measured at t j approximately 90c. ? limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 33a, v gs =10v. ? when mounted on 1 inch square pcb (fr-4). please refer to an-994 for more details: http://www.irf.com/technica l-info/appnotes/an-994.pdf downloaded from: http:///
? IRFH7085pbf 3 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units conditions gfs forward transconductance 140 CCC CCC s v ds = 10v, i d = 75a q g total gate charge CCC 110 165 i d = 75a q gs gate-to-source charge CCC 30 CCC v ds = 30v q gd gate-to-drain charge CCC 36 CCC v gs = 10v q sync total gate charge sync. (qg - qgd) CCC 74 CCC t d(on) turn-on delay time CCC 13 CCC ns v dd = 30v t r rise time CCC 25 CCC i d = 30a t d(off) turn-off delay time CCC 63 CCC r g = 2.7 ?? t f fall time CCC 23 CCC v gs = 10v ? c iss input capacitance CCC 6460 CCC pf ? v gs = 0v c oss output capacitance CCC 560 CCC v ds = 25v c rss reverse transfer capacitance CCC 380 CCC ? = 1.0mhz c oss eff.(er) effective output capacitance (e nergy related) CCC 570 CCC v gs = 0v, v ds = 0v to 48v ? c oss eff.(tr) output capacitance (time related) CCC 715 CCC v gs = 0v, v ds = 0v to 48v ? diode characteristics ? symbol parameter min. typ. max. units conditions i s continuous source current CCC CCC 147 ? a mosfet symbol (body diode) showing the i sm pulsed source current CCC CCC 590 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c,i s = 75a,v gs = 0v ?? dv/dt peak diode recovery dv/dt ?? CCC 3.0 CCC v/ns t j = 150c,i s = 75a,v ds = 60v ? t rr reverse recovery time CCC 31 CCC ns t j = 25c v dd = 51v CCC 30 CCC t j = 125c i f = 75a, q rr reverse recovery charge CCC 39 CCC nc t j = 25c di/dt = 100a/s ??? CCC 33 CCC t j = 125c ? i rrm reverse recovery current CCC 1.9 CCC a t j = 25c ? nc ? d s g downloaded from: http:///
? IRFH7085pbf 4 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 fig 6. normalized on-resistance vs. temperature 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss fig 5. typical transfer characteristics fig 4. typical output characteristics 3 4 5 6 7 8 v gs , gate-to-source voltage (v) 1.0 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 25v ? 60s pulse width fig 3. typical output characteristics 0 20 40 60 80 100 120 140 160 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 48v v ds = 30v i d = 75a fig 8. typical gate charge vs . gate-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v ? 60s pulse width tj = 25c 4.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.3v ? 60s pulse width tj = 150c vgs top 15v 10v 7.0v 6.0v 5.0v 4.5v 4.3v bottom 4.0v fig 7. typical capacitance vs. drain-to-source voltage -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.4 0.8 1.2 1.6 2.0 2.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 75a v gs = 10v downloaded from: http:///
? IRFH7085pbf 5 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 0.1 1 10 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 10msec 1msec operation in this area limited by r ds (on) 100sec dc limited by package fig 10. maximum safe operating area fig 11. drain-to-source breakdown voltage 0 10203040506070 v ds, drain-to-source voltage (v) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 e n e r g y ( j ) fig 12. typical c oss stored energy -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , temperature ( c ) 64 66 68 70 72 74 76 v ( b r ) d s s , d r a i n - t o - s o u r c e b r e a k d o w n v o l t a g e ( v ) id = 1.0ma fig 13. typical on-resista nce vs. drain current 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 1.0 10 100 1000 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v fig 9. typical source-drain diode forward voltage 0 20 40 60 80 100 120 140 160 180 200 i d , drain current (a) 2.2 2.4 2.6 2.8 3.0 3.2 3.4 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ? ) v gs = 6.0v v gs = 7.0v v gs = 10v v gs = 15v downloaded from: http:///
? IRFH7085pbf 6 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) allowed avalanche current vs avalanche pulsewidth, tav, assuming ?? j = 25c and tstart = 125c. allowed avalanche current vs avalanche pulsewidth, tav, assuming ? tj = 125c and tstart =25c (single pulse) fig 14. maximum effective transient thermal impedance, junction-to-case 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 200 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1.0% duty cycle i d = 75a fig 15. typical avalanche current vs. pulse width notes on repetitive avalanche curves , figures 15, 16: (for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type. 2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 22a, 22b. 4. p d (ave) = average power dissipation per single avalanche pulse. 5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 14, 16). t av = average time in avalanche. d = duty cycle in avalanche = tav f z thjc (d, t av ) = transient thermal resistance, see figures 13) pd (ave) = 1/2 ( 1.3bvi av ) = ? t/ z thjc i av = 2 ? t/ [1.3bvz th ] e as (ar) = p d (ave) t av ?? fig 16. maximum avalanche energy vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r ma l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc downloaded from: http:///
? IRFH7085pbf 7 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 fig 17. threshold voltage vs. temperature fig 18. typical recovery current vs. dif/dt 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 q r r ( n c ) i f = 75a v r = 51v t j = 25c t j = 125c fig 20. typical stored charge vs. dif/dt fig 19. typical recovery current vs. dif/dt fig 21. typical stored charge vs. dif/dt -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 150a i d = 250a i d = 1.0ma i d = 1.0a 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 45a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 2 4 6 8 10 12 i r r m ( a ) i f = 75a v r = 51v t j = 25c t j = 125c 0 200 400 600 800 1000 di f /dt (a/s) 0 40 80 120 160 200 q r r ( n c ) i f = 45a v r = 51v t j = 25c t j = 125c downloaded from: http:///
? IRFH7085pbf 8 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 fig 22. peak diode recovery dv/dt test circuit for n-channel hexfet ? power mosfets fig 23a. unclamped inductive test circuit r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 24a. switching time test circuit fig 25a. gate charge test circuit t p v (br)dss i as fig 23b. unclamped inductive waveforms fig 24b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 25b. gate charge waveform vdd ? downloaded from: http:///
? IRFH7085pbf 9 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ pqfn 5x6 outline "b" package details xxxx xywwx xxxxx international rectifier logo part number (4 or 5 digits) marking code (per marking spec) assembly site code (per scop 200-002) date code pin 1 identifier lot code (eng mode - min last 4 digits of eati#) (prod mode - 4 digits of spn code) pqfn 5x6 outline "b" part marking for more information on board mounting, including footprint and stencil recommendation, please refer to application note an-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf for more information on package inspection techniques, please refer to application note an-1154: http://www.irf.com/technical-info/appnotes/an-1154.pdf 0.42 ref 0.40 ref 0.87 ref. 0.87 ref. 0.87 ref. 1.30 ref 0.40 ref downloaded from: http:///
? IRFH7085pbf 10 www.irf.com ? 2014 international rectifier submit datasheet feedback november 7 , 2014 ir world headquarters: 101 n. sepulveda blvd., el segundo, california 90245, usa to contact international rectifier, please visit http://www.irf.com/whoto-call/ pqfn 5x6 outline "b" tape and reel note: for the most current drawing please refer to ir website at http://www.irf.com/package/ qualification information ? ? qualification level industrial (per jedec jesd47f ?? guidelines ) moisture sensitivity level pqfn 5mm x 6mm msl1 (per jedec j-std-020d ??) rohs compliant yes ? qualification standards can be found at international rectifiers web site http://www.irf.com/product-info/reliability ?? applicable version of jedec standar d at the time of product release. revision history date comments 11/7/2014 ?? added e as (l =1mh) = 554mj on page 2 ?? added note 9 limited by t jmax , starting t j = 25c, l = 1mh, r g = 50 ? , i as = 33a, v gs =10v. on page 2 ?? added pd @ tc = 25 c on absolute max rating table on page 2 downloaded from: http:///
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